A semiconductor device and method for fabricating the semiconductor device, which secure an overlay margin between the storage node and the storage node contact plug, as well as a processing margin, by excluding the connecting structure between the storage node and the storage node contact plug. A semiconductor device comprises a storage node contact hole provided between bit line structures, a first plug filling a lower portion of the storage node contact hole, a second plug protruding from the first plug, an insulation layer spacer covering a side wall of the second plug, and a storage node positioned at a higher level than the second plug and including an extension contacting another side wall of the second plug and a portion of a top surface of the first plug.