Techniques for using native and/or previously programmed resistive switching devices as one time programmable memory are discussed. On example method comprises allocating a set of resistive switching devices to be one time programmable memory; determining data to be stored in the set of resistive switching devices; for each resistive switching device of the set of resistive switching devices, assigning one of a first digital value or a second digital value to that resistive switching device, based on the data; and for each resistive switching device assigned the first digital value, permanently programming that resistive switching device via reverse formation.