Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
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Application No.: US18188095Application Date: 2023-03-22
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Publication No.: US12020909B2Publication Date: 2024-06-25
- Inventor: Jang-Yeob Lee , Sungyeol Kim , Jinyeong Yun , Minsung Kim , HoSun Yoo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR 20200123970 2020.09.24
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.
Public/Granted literature
- US20230230815A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2023-07-20
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