Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US17690709Application Date: 2022-03-09
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Publication No.: US12020943B2Publication Date: 2024-06-25
- Inventor: Atsushi Yamashita , Koji Kagawa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 21043648 2021.03.17
- Main IPC: H01L21/311
- IPC: H01L21/311 ; B08B3/08 ; B08B13/00 ; F26B5/00 ; H01L21/02 ; H01L21/3213
Abstract:
A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.
Public/Granted literature
- US20220301880A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2022-09-22
Information query
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