Invention Grant
- Patent Title: Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material
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Application No.: US17224003Application Date: 2021-04-06
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Publication No.: US12020979B2Publication Date: 2024-06-25
- Inventor: Gurtej S. Sandhu , Sony Varghese , John A. Smythe , Hyun Sik Kim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- The original application number of the division: US15650194 2017.07.14
- Main IPC: H01L21/762
- IPC: H01L21/762 ; B29C41/08 ; H01L21/02 ; H01L21/288 ; H01L21/32 ; H01L21/67 ; H01L21/768 ; B29C35/08 ; B29K83/00 ; B32B3/26

Abstract:
Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.
Public/Granted literature
Information query
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