Invention Grant
- Patent Title: P-type strained channel in a fin field effect transistor (FinFET) device
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Application No.: US18362210Application Date: 2023-07-31
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Publication No.: US12021143B2Publication Date: 2024-06-25
- Inventor: Shahaji B. More , Huai-Tei Yang , Shih-Chieh Chang , Shu Kuan , Cheng-Han Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15922681 2018.03.15
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L29/10 ; H01L29/16 ; H01L29/161 ; H01L29/66
Abstract:
In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.
Public/Granted literature
- US20230378359A1 P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) Device Public/Granted day:2023-11-23
Information query
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