Invention Grant
- Patent Title: Transistor, integrated circuit, and manufacturing method of transistor
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Application No.: US18165936Application Date: 2023-02-08
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Publication No.: US12021154B2Publication Date: 2024-06-25
- Inventor: Marcus Johannes Henricus Van Dal
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/06 ; H01L29/41 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H10B61/00 ; H10B63/00

Abstract:
A transistor includes a first gate structure, a channel layer, and source/drain contacts. The first gate structure includes metallic nanosheets and a gate dielectric layer wrapping around the metallic nanosheets. The channel layer wraps around a portion of the gate dielectric layer. The source/drain contacts are aside the metallic nanosheets. The source/drain contacts are electrically connected to the channel layer.
Public/Granted literature
- US20230187562A1 TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR Public/Granted day:2023-06-15
Information query
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