Invention Grant
- Patent Title: Display apparatus having an oxide semiconductor pattern
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Application No.: US18105682Application Date: 2023-02-03
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Publication No.: US12022704B2Publication Date: 2024-06-25
- Inventor: Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR 20190180187 2019.12.31
- Main IPC: H10K59/131
- IPC: H10K59/131 ; H10K50/844

Abstract:
A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.
Public/Granted literature
- US20230189591A1 DISPLAY APPARATUS HAVING AN OXIDE SEMICONDUCTOR PATTERN Public/Granted day:2023-06-15
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