Invention Grant
- Patent Title: Insulated metal substrate and method for manufacturing same
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Application No.: US17512945Application Date: 2021-10-28
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Publication No.: US12023893B2Publication Date: 2024-07-02
- Inventor: Feng-Chun Yu , Kai-Wei Lo , Wen Feng Lee , Ru-Yi Cai
- Applicant: Polytronics Technology Corp.
- Applicant Address: TW Hsinchu
- Assignee: TCLAD TECHNOLOGY CORPORATION
- Current Assignee: TCLAD TECHNOLOGY CORPORATION
- Current Assignee Address: TW Miaoli County
- Agency: MUNCY, GEISSLER, OLDS & LOWE, P.C.
- Priority: TW 0106768 2021.02.25
- The original application number of the division: US17306196 2021.05.03
- Main IPC: B32B43/00
- IPC: B32B43/00 ; B32B7/12 ; B32B15/092 ; B32B15/20 ; B32B38/10 ; H01L21/3105 ; H01L21/48 ; H01L23/14 ; H01L23/373 ; B29C65/48 ; B32B37/12 ; B32B37/24 ; B32B38/18

Abstract:
An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.
Public/Granted literature
- US20220266572A1 INSULATED METAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-08-25
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