Invention Grant
- Patent Title: Method for electrochemical transformation of amorphous material to crystalline material
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Application No.: US16774684Application Date: 2020-01-28
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Publication No.: US12024424B2Publication Date: 2024-07-02
- Inventor: Prashant Bagri , Sheng Dai , Huimin Luo
- Applicant: UT-Battelle, LLC
- Applicant Address: US TN Oak Ridge
- Assignee: UT-Battelle, LLC
- Current Assignee: UT-Battelle, LLC
- Current Assignee Address: US TN Oak Ridge
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: C01B21/064
- IPC: C01B21/064 ; C01F5/32

Abstract:
A method for converting amorphous boron nitride to crystalline boron nitride, the method comprising immersing the amorphous boron nitride into anhydrous molten magnesium chloride maintained within a temperature range of 720° C.-820° C. while the amorphous boron nitride is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a period of time of at least 2 minutes to result in conversion of the amorphous boron nitride to the crystalline form. Also described herein is a method for converting an amorphous carbon material to a crystalline carbon material, the method comprising immersing said amorphous carbon material into anhydrous molten magnesium chloride maintained within a temperature range of 780° C.-820° C. while the amorphous carbon material is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a period of time of at least 2 minutes to result in conversion of the amorphous carbon material to the crystalline form.
Public/Granted literature
- US20210229997A1 METHOD FOR ELECTROCHEMICAL TRANSFORMATION OF AMORPHOUS MATERIAL TO CRYSTALLINE MATERIAL Public/Granted day:2021-07-29
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