Invention Grant
- Patent Title: Chemical mechanical polishing slurry composition and method of polishing metal layer
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Application No.: US17688869Application Date: 2022-03-07
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Publication No.: US12024651B2Publication Date: 2024-07-02
- Inventor: Chun-Hung Liao , An-Hsuan Lee , Shen-Nan Lee , Teng-Chun Tsai , Chen-Hao Wu , Huang-Lin Chao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- The original application number of the division: US16805864 2020.03.02
- Main IPC: C09G1/02
- IPC: C09G1/02 ; B24B1/00 ; B24B37/04 ; C09G1/00 ; C09G1/04 ; C09G1/06 ; C09K3/14 ; C09K13/06 ; H01L21/306 ; H01L21/321 ; H01L21/8238
Abstract:
A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.
Public/Granted literature
- US20220195246A1 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF POLISHING METAL LAYER Public/Granted day:2022-06-23
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