Invention Grant
- Patent Title: Polishing composition and method of polishing a substrate having enhanced defect reduction
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Application No.: US18046180Application Date: 2022-10-13
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Publication No.: US12024652B2Publication Date: 2024-07-02
- Inventor: Yi Guo
- Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee Address: US DE Newark
- Agent John J. Piskorski; Blake T. Biederman
- The original application number of the division: US17241399 2021.04.27
- Main IPC: C09G1/02
- IPC: C09G1/02 ; C09K13/00 ; C09K13/02 ; H01L21/3105
Abstract:
An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.
Public/Granted literature
- US20230083732A1 POLISHING COMPOSITION AND METHOD OF POLISHING A SUBSTRATE HAVING ENHANCED DEFECT REDUCTION Public/Granted day:2023-03-16
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