Invention Grant
- Patent Title: Semiconductor apparatus including a plurality of dies operating as a plurality of channels
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Application No.: US17201767Application Date: 2021-03-15
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Publication No.: US12026399B2Publication Date: 2024-07-02
- Inventor: Soo Bin Lim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix inc.
- Current Assignee: SK hynix inc.
- Current Assignee Address: KR Icheon-si
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR 20180081446 2018.07.13
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G11C5/02 ; G11C5/06 ; G11C29/52 ; H01L23/00 ; H01L25/065

Abstract:
A semiconductor apparatus includes a substrate, a first die, and a second die. The substrate includes first and second byte pads of a first channel and first and second byte pad of a second channel. First byte pads of the first die are respectively coupled to the first byte pads of the first channel, and second byte pads of the first die are respectively coupled to the second byte pads of the first channel. The second die, as disposed, is rotated by 180° with respect to the first die. First byte pads of the second die are respectively coupled to the second byte pads of the second channel, and second byte pads of the second die are respectively coupled to the first byte pads of the second channel.
Public/Granted literature
- US20210200479A1 SEMICONDUCTOR APPARATUS INCLUDING A PLURALITY OF DIES OPERATING AS A PLURALITY OF CHANNELS Public/Granted day:2021-07-01
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