Invention Grant
- Patent Title: Preparation method of high resistance gallium oxide based on deep learning and vertical bridgman growth method
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Application No.: US17761030Application Date: 2021-02-05
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Publication No.: US12026616B2Publication Date: 2024-07-02
- Inventor: Hongji Qi , Long Zhang , Duanyang Chen
- Applicant: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Applicant Address: CN Zhejiang
- Assignee: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Current Assignee: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Current Assignee Address: CN Hangzhou
- Agency: Maier & Maier, PLLC
- Priority: CN 2011642207.0 2020.12.31
- International Application: PCT/CN2021/075563 2021.02.05
- International Announcement: WO2022/141751A 2022.07.07
- Date entered country: 2022-03-16
- Main IPC: C30B15/20
- IPC: C30B15/20 ; G06N3/08

Abstract:
The present application discloses a preparation method of high resistance gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method comprises: obtaining a preparation data of the high resistance gallium oxide single crystal, the preparation data comprises a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data comprises a doping type data and a doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted property data comprises a predicted resistivity.
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