Invention Grant
- Patent Title: Method, device, apparatus and storage medium for repairing failed bits
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Application No.: US17449590Application Date: 2021-09-30
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Publication No.: US12027223B2Publication Date: 2024-07-02
- Inventor: Yui-Lang Chen
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Anhui
- Agency: SYNCODA LLC
- Agent Feng Ma
- Priority: CN 2011225125.6 2020.11.05
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G11C29/00 ; G11C29/12

Abstract:
A method for repairing a failed bit includes: acquiring a repair specification of redundancy of a chip where the failed bit is located; standardizing the repair specification of the redundancy to obtain a standardized repair specification; acquiring the position of the failed bit on the chip; processing the position of the failed bit on the chip according to the standardized repair specification to obtain standardized position of the failed bit; allocating the redundancy by the redundancy allocation algorithm according to the standardized position of the failed bit and the standardized repair specification to obtain standardized repair position of the redundancy; and restoring the standardized repair position of the redundancy to the repair a position of the redundancy on the chip according to the standardized repair specification to repair the failed bit.
Public/Granted literature
- US20220139490A1 METHOD, DEVICE, APPARATUS AND STORAGE MEDIUM FOR REPAIRING FAILED BITS Public/Granted day:2022-05-05
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