- Patent Title: Method of manufacturing semiconductor device having stacks on wafer
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Application No.: US17463913Application Date: 2021-09-01
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Publication No.: US12027378B2Publication Date: 2024-07-02
- Inventor: Takashi Watanabe
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20168325 2020.10.05
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/02 ; H01L21/321 ; H01L21/768
Abstract:
A method of manufacturing a semiconductor device, includes: alternately stacking a first film and a second film on a surface of a semiconductor substrate to form a multilayer film; partially removing the multilayer film to form stacks and a depression between one of the stacks and another one of the stacks and expose an end portion of the surface; forming a first insulating film to fill the depression; forming a first protective film on the stacks, the first insulating film, and the end portion; forming a second insulating film on the first protective film, the second insulating film overlapping at least a part of the other one of the stacks and the end portion; and removing the second insulating film in a thickness direction using chemical mechanical polishing.
Public/Granted literature
- US20220108895A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-04-07
Information query
IPC分类:
