Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17415557Application Date: 2019-03-20
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Publication No.: US12027438B2Publication Date: 2024-07-02
- Inventor: Daisuke Nakaya
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2019/011794 2019.03.20
- International Announcement: WO2020/188806A 2020.09.24
- Date entered country: 2021-06-17
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/00 ; H01L23/367 ; H01L23/373 ; H01L23/498 ; H01L25/07 ; H01L23/552

Abstract:
A semiconductor device including a board having a ground electrode and resin layers and a semiconductor chip mounted on the board, includes: a core embedded inside the board such that a front surface thereof is exposed on the front surface side of the board; a filled via provided so as to penetrate the resin layer disposed between the core and the ground electrode, of the resin layers, and electrically connecting a back surface of the core and the ground electrode; a joining material including a lid provided on the board so as to cover the semiconductor chip, having an exposed front surface, and having a high thermal conductivity and sintered silver joining a back surface of the lid and the front surface of the core; and a mold resin transfer-molded on an entirety of the front surface of the board and provided so as to surround the lid.
Public/Granted literature
- US20220059428A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-02-24
Information query
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