Provided is a manufacturing method of a semiconductor structure, comprising: forming a sacrificial layer on a substrate; forming a trench in the sacrificial layer; forming a first spacer structure in the trench, the first spacer structure at least covering sidewalls of the trench; forming a first conductive structure in the trench; forming a second conductive structure, the second conductive structure covering an outer sidewall of the first spacer structure; forming a second spacer structure, the second spacer structure covering an outer sidewall of the second conductive structure; and forming a third conductive structure, the third conductive structure covering an outer sidewall of the second spacer structure.