Invention Grant
- Patent Title: Method and structure for determining blocking ability of copper diffusion blocking layer
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Application No.: US16961927Application Date: 2020-05-21
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Publication No.: US12027462B2Publication Date: 2024-07-02
- Inventor: Xiaobo Hu
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Guangdong
- Agency: PV IP PC
- Agent Wei Te Chung; Zhigang Ma
- Priority: CN 2010408314.0 2020.05.14
- International Application: PCT/CN2020/091630 2020.05.21
- International Announcement: WO2021/227123A 2021.11.18
- Date entered country: 2020-07-14
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/285 ; H01L21/768 ; H01L23/15

Abstract:
A method and a structure for determining a blocking ability of a copper diffusion blocking layer are disclosed. The method includes: a step S1 of forming an a-Si semiconductor layer, the copper diffusion blocking layer, and a copper electrode layer on a glass substrate; a step S2 of forming a transparent electrode layer on the glass substrate; a step S3 of performing a high temperature deterioration process to the glass substrate; and a step S4 of observing a degree of forming the black copper-silicon alloy layer on a surface of a composite film layer sample of the glass substrate.
Public/Granted literature
- US20230100023A1 METHOD AND STRUCTURE FOR DETERMINING BLOCKING ABILITY OF COPPER DIFFUSION BLOCKING LAYER Public/Granted day:2023-03-30
Information query
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