Method and structure for determining blocking ability of copper diffusion blocking layer
Abstract:
A method and a structure for determining a blocking ability of a copper diffusion blocking layer are disclosed. The method includes: a step S1 of forming an a-Si semiconductor layer, the copper diffusion blocking layer, and a copper electrode layer on a glass substrate; a step S2 of forming a transparent electrode layer on the glass substrate; a step S3 of performing a high temperature deterioration process to the glass substrate; and a step S4 of observing a degree of forming the black copper-silicon alloy layer on a surface of a composite film layer sample of the glass substrate.
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