Invention Grant
- Patent Title: Memory device and fabrication method thereof
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Application No.: US17186314Application Date: 2021-02-26
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Publication No.: US12027463B2Publication Date: 2024-07-02
- Inventor: Liang Xiao
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Wuhan
- Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee Address: CN Wuhan
- Agency: Anova Law Group, PLLC
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; H10B43/27 ; H10B43/40

Abstract:
A memory device includes a memory array, disposed on a substrate of a peripheral-circuit structure; a conductive plug, extending through the memory array and connected to the peripheral-circuit structure; and a conductive pad layer, disposed over the memory array and including a plurality of conductive pads spaced apart from each other. The conductive plug protrudes into a corresponding conductive pad of the plurality of conductive pads.
Public/Granted literature
- US20220199531A1 MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2022-06-23
Information query
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