Memory device and fabrication method thereof
Abstract:
A memory device includes a memory array, disposed on a substrate of a peripheral-circuit structure; a conductive plug, extending through the memory array and connected to the peripheral-circuit structure; and a conductive pad layer, disposed over the memory array and including a plurality of conductive pads spaced apart from each other. The conductive plug protrudes into a corresponding conductive pad of the plurality of conductive pads.
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