Invention Grant
- Patent Title: Solid-state imaging device and electronic apparatus
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Application No.: US18129383Application Date: 2023-03-31
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Publication No.: US12027540B2Publication Date: 2024-07-02
- Inventor: Shouichirou Shiraishi , Takuya Maruyama , Shinichiro Yagi , Shohei Shimada , Shinya Sato
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: SHERIDAN ROSS P.C.
- Priority: JP 17105715 2017.05.29 JP 18095949 2018.05.18
- Main IPC: H01L27/146
- IPC: H01L27/146 ; B60R11/04

Abstract:
The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image.
There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.
There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.
Public/Granted literature
- US11888001B2 Solid-state imaging device and electronic apparatus Public/Granted day:2024-01-30
Information query
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