Invention Grant
- Patent Title: Semiconductor element and method of manufacturing the same
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Application No.: US17283675Application Date: 2019-10-03
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Publication No.: US12027557B2Publication Date: 2024-07-02
- Inventor: Ryosuke Matsumoto
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP 18195110 2018.10.16
- International Application: PCT/JP2019/039139 2019.10.03
- International Announcement: WO2020/080124A 2020.04.23
- Date entered country: 2021-04-08
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor element including: an element substrate provided with an element region at a middle part and a peripheral region outside the element region; and a readout circuit substrate facing the element substrate, in which the element substrate includes a first semiconductor layer provided in the element region and including a compound semiconductor material, a wiring layer provided between the first semiconductor layer and the readout circuit substrate, the wiring layer electrically coupling the first semiconductor layer and the readout circuit substrate to each other, a first passivation film provided between the wiring layer and the first semiconductor layer, and a second passivation film opposed to the first passivation film with the first semiconductor layer interposed therebetween, and in which the peripheral region of the element substrate includes a bonded surface with respect to the readout circuit substrate.
Public/Granted literature
- US20210384246A1 SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-12-09
Information query
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