Invention Grant
- Patent Title: Semiconductor device having a carrier trapping region including crystal defects
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Application No.: US16480203Application Date: 2018-01-25
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Publication No.: US12027579B2Publication Date: 2024-07-02
- Inventor: Seigo Mori , Masatoshi Aketa
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: XSENSUS LLP
- Priority: JP 17011610 2017.01.25
- International Application: PCT/JP2018/002358 2018.01.25
- International Announcement: WO2018/139557A 2018.08.02
- Date entered country: 2019-07-23
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L21/04 ; H01L23/00 ; H01L23/31 ; H01L23/495 ; H01L29/16 ; H01L29/32 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/872 ; H02M7/00 ; H02M7/5387 ; H02P27/06
Abstract:
A semiconductor device includes a semiconductor layer of a first conductivity type having a main surface, a diode region of the first conductivity type formed in a surface layer portion of the main surface of the semiconductor layer, a carrier trapping region including crystal defects and formed along a peripheral edge of the diode region in the surface layer portion of the main surface of the semiconductor layer, and an anode electrode formed on the main surface of the semiconductor layer and forming a Schottky junction with the diode region.
Information query
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