Invention Grant
- Patent Title: Semiconductor structure having dielectric structure extending into second cavity of semiconductor Fin
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Application No.: US17325622Application Date: 2021-05-20
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Publication No.: US12027608B2Publication Date: 2024-07-02
- Inventor: Ryan Chia-Jen Chen , Li-Wei Yin , Tzu-Wen Pan , Cheng-Chung Chang , Shao-Hua Hsu , Yi-Chun Chen , Yu-Hsien Lin , Ming-Ching Chang
- Applicant: DO NOT USE—Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/78 ; H01L21/84 ; H01L27/12
Abstract:
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.
Public/Granted literature
- US20210280695A1 Semiconductor Structure Cutting Process and Structures Formed Thereby Public/Granted day:2021-09-09
Information query
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