Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17395910Application Date: 2021-08-06
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Publication No.: US12027618B2Publication Date: 2024-07-02
- Inventor: Hiro Gangi , Yasunori Taguchi , Tomoaki Inokuchi , Yusuke Kobayashi , Hiroki Nemoto
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20183591 2020.11.02
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40
Abstract:
According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a conductive member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The second semiconductor region is between the first partial region and the third semiconductor region. The conductive member is located between the second partial region and the third electrode. The conductive member includes a first end portion and a first other-end portion. The first end portion is between the first other-end portion and the third electrode. The conductive member includes first to third portions. The second portion is between the third portion and the third electrode. The first portion is between the second portion and the third electrode. The first portion includes the first end portion. The second portion contacts the first and third portions.
Public/Granted literature
- US20220140133A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-05-05
Information query
IPC分类:
