Invention Grant
- Patent Title: Insulated gated field effect transistor structure having shielded source and method
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Application No.: US18188233Application Date: 2023-03-22
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Publication No.: US12027622B2Publication Date: 2024-07-02
- Inventor: Xiaoli Wu , Joseph Andrew Yedinak
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Scottsdale
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agent Kevin B. Jackson
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/07 ; H01L29/10 ; H01L29/40 ; H01L29/66
Abstract:
A semiconductor device includes a region of semiconductor material of a first conductivity type. A body region of a second conductivity type is in the region of semiconductor material. The body region includes a first segment with a first peak dopant concentration, and a second segment laterally adjacent to the first segment with a second peak dopant concentration. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and is configured to provide a second channel region in the second segment, and adjoins the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.
Public/Granted literature
- US20230223474A1 INSULATED GATED FIELD EFFECT TRANSISTOR STRUCTURE HAVING SHIELDED SOURCE AND METHOD Public/Granted day:2023-07-13
Information query
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