An SGT circuit includes a first conductor layer which contains a semiconductor atom, which is in contact with an N+ region and a P+ region of a Si pillar, or a TiN layer, and whose outer circumference is located outside an outer circumference of a SiO2 layer in plan view, and a second conductor layer which contains a metal atom, which is connected to an outer periphery of the first conductor layer, and which extends in a horizontal direction.