Invention Grant
- Patent Title: Semiconductor laser
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Application No.: US17057037Application Date: 2019-05-09
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Publication No.: US12027818B2Publication Date: 2024-07-02
- Inventor: Erina Kanno , Koji Takeda , Takaaki Kakitsuka , Shinji Matsuo
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Priority: JP 18096890 2018.05.21
- International Application: PCT/JP2019/018526 2019.05.09
- International Announcement: WO2019/225331A 2019.11.28
- Date entered country: 2020-11-19
- Main IPC: H01S5/12
- IPC: H01S5/12 ; H01S5/125

Abstract:
A semiconductor laser includes a distributed feedback active region and two distribution Bragg reflecting mirror regions which are arranged to be continuous with the distributed feedback active region. The distributed feedback active region has an active layer which is composed of a compound semiconductor and a first diffraction grating. The first diffraction grating is composed of a recessed portion which is formed to extend through a diffraction grating layer formed on the active layer and a projection portion which is adjacent to the recessed portion.
Public/Granted literature
- US20210126430A1 Semiconductor Laser Public/Granted day:2021-04-29
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