Invention Grant
- Patent Title: High-side FET two-stage adaptive turn-off
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Application No.: US17490151Application Date: 2021-09-30
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Publication No.: US12027967B2Publication Date: 2024-07-02
- Inventor: Stephen Isaac Brink , Wei Da
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Charles F. Koch; Frank D. Cimino
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H02M1/00 ; H02M1/088 ; H02M1/32 ; H02M3/156

Abstract:
In an example, a method includes providing a signal to a driver for a switching voltage regulator to turn off a high-side field effect transistor (FET) of the switching voltage regulator. The method also includes reducing a voltage at a source of the high-side FET. The method includes responsive to the signal, turning off a pull-down FET coupled to a gate of the high-side FET. The method also includes commutating current from the high-side FET to a low-side FET.
Public/Granted literature
- US20230095105A1 HIGH-SIDE FET TWO-STAGE ADAPTIVE TURN-OFF Public/Granted day:2023-03-30
Information query
IPC分类: