Invention Grant
- Patent Title: Gallium nitride operational amplifier
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Application No.: US17503467Application Date: 2021-10-18
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Publication No.: US12028031B2Publication Date: 2024-07-02
- Inventor: Cher-Ming Tan , Vimal Kant Pandey
- Applicant: Chang Gung University
- Applicant Address: TW Taoyuan
- Assignee: CHANG GUNG UNIVERSITY
- Current Assignee: CHANG GUNG UNIVERSITY
- Current Assignee Address: TW Taoyuan
- Agency: BACON & THOMAS, PLLC
- Priority: TW 0129113 2021.08.06
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
The present invention is gallium nitride based operational amplifier because reliability and performance of the gallium nitride is better than the silicon counterpart in radiation environment. The operational amplifier includes four stages, first stage is dual input balanced output differential amplifier, second stage is dual input unbalanced differential amplifier, third stage is buffer stage to couple second and fourth stage, and fourth stage is cascaded common source amplifier with degeneration. A capacitor coupled between second and third stage is to enhance the stability of operational amplifier.
Public/Granted literature
- US20230039249A1 GALLIUM NITRIDE OPERATIONAL AMPLIFIER Public/Granted day:2023-02-09
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