Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18178038Application Date: 2023-03-03
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Publication No.: US12028068B2Publication Date: 2024-07-02
- Inventor: Fumiya Watanabe , Toshifumi Watanabe , Kazuhiko Satou , Shouichi Ozaki , Kenro Kubota , Atsuko Saeki , Ryota Tsuchiya , Harumi Abe
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 22148456 2022.09.16
- Main IPC: H03K3/011
- IPC: H03K3/011 ; G11C7/10 ; H03K17/14 ; H03K19/20

Abstract:
A semiconductor device includes a first pad, a second pad, a first output driver provided for the first pad and configured to output a first transmission signal to the first pad, a second output driver provided for the second pad and configured to output a second transmission signal to the second pad, a register that stores first and second calibration values, a first reference resistor for the first pad and having a resistance value that is set according to the first calibration value, a second reference resistor for the second pad and having a resistance value that is set according to the second calibration value, a first setting circuit configured to calibrate a resistance value of the first output driver using the first reference resistor, and a second setting circuit configured to calibrate a resistance value of the second output driver using the second reference resistor.
Public/Granted literature
- US20240097658A1 SEMICONDUCTOR DEVICE Public/Granted day:2024-03-21
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