Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US17184678Application Date: 2021-02-25
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Publication No.: US12028971B2Publication Date: 2024-07-02
- Inventor: Kyosuke Shibata , Toru Matsuyama
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Global IP Counselors, LLP
- Priority: JP 20031813 2020.02.27
- Main IPC: H01L23/50
- IPC: H01L23/50 ; G06F13/16 ; G06F13/38 ; G06F13/42 ; G06F15/78 ; H01L23/498 ; H05K1/02 ; H05K1/11 ; H05K1/18

Abstract:
There is provided a semiconductor apparatus including a first high-speed communication controller and a second high-speed communication controller that perform high-speed communication; a first high-speed communication terminal group that includes a first high-speed communication terminal for inputting a first signal; a second high-speed communication terminal group that includes a second high-speed communication terminal for inputting a second signal; and a terminal mounting surface, in which the terminal mounting surface includes a first side and a second side, a shortest distance from the first high-speed communication terminal group to the first side is shorter than a shortest distance from the second high-speed communication terminal group to the first side, and a shortest distance from the second high-speed communication terminal group to the second side is shorter than a shortest distance from the first high-speed communication terminal group to the second side.
Public/Granted literature
- US20210274642A1 SEMICONDUCTOR APPARATUS Public/Granted day:2021-09-02
Information query
IPC分类: