Disclosed herein is an apparatus and method for fine tuning properties of a thin film. The method of forming a piezoelectric film includes (a) depositing a first piezoelectric film layer on a surface of a substrate by a first physical vapor deposition (PVD) process. The method includes (b) depositing a second piezoelectric film layer, on top of and in contact with the first piezoelectric film layer, by a second PVD process. A temperature of the substrate is (c) reduced after forming the first piezoelectric film layer and before forming the second piezoelectric film layer. The temperature is reduced by performing a process for a first period of time. Processes (a), (b) and (c) are additionally performed one or more times. Process (c) is performed for a second period of time. The second period of time is different than the first period of time.