The present disclosure provides a magnetic random-access memory cell, a memory and a device. The magnetic random-access memory cell comprises: a spin-orbit coupling layer and a first magnetic tunnel junction and a second magnetic tunnel junction disposed on the spin-orbit coupling layer, the first magnetic tunnel junction and the second magnetic tunnel junction having at least two symmetrical axes with different lengths; an angle between an easy magnetization symmetrical axis direction of a free layer of the first magnetic tunnel junction and a length direction of the spin-orbit coupling layer is a preset first angle, and an angle between an easy magnetization symmetrical axis direction of a free layer of the second magnetic tunnel junction and the length direction of the spin-orbit coupling layer is a preset second angle; neither of the first angle and the second angle is zero degree, 90 degrees or 180 degrees.