Invention Grant
- Patent Title: Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor
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Application No.: US17521017Application Date: 2021-11-08
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Publication No.: US12029137B2Publication Date: 2024-07-02
- Inventor: Sumio Ikegawa
- Applicant: EVERSPIN TECHNOLOGIES, INC.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11C11/16 ; H01F10/32 ; H01F41/32 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85
Abstract:
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
Public/Granted literature
- US20220059755A1 MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR Public/Granted day:2022-02-24
Information query
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