Invention Grant
- Patent Title: Process and mismatch insensitive temperature sensor
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Application No.: US17504760Application Date: 2021-10-19
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Publication No.: US12031873B2Publication Date: 2024-07-09
- Inventor: Peh Sheng Jue , Jeffrey L. Sonntag
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: NIELDS, LEMACK & FRAME, LLC
- Main IPC: G01K7/00
- IPC: G01K7/00 ; H03H7/06 ; H03F3/45

Abstract:
A temperature sensor that is insensitive to process variation and mismatch is disclosed. The temperature sensor includes a PTAT voltage generator, a sampling and gain boosting circuit, a filter and a controller. The PTAT voltage generator utilizes a plurality of current sources, each of which is in electrical communication with the same diode, or diode stack. The output of the PTAT voltage generator is sampled and amplified with the sampling and gain boosting circuit. The output of the sampling and gain boosting circuit is then filtered using a low pass filter. The selection of the current mirrors, the sampling timing and other signals are provided by the controller. In some simulations, the output from the temperature sensor was accurate to within 1.5° C., using a one temperature calibration process.
Public/Granted literature
- US20230121535A1 Process And Mismatch Insensitive Temperature Sensor Public/Granted day:2023-04-20
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