Invention Grant
- Patent Title: Band-pass filter and manufacturing method therefor
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Application No.: US17288858Application Date: 2019-10-24
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Publication No.: US12032187B2Publication Date: 2024-07-09
- Inventor: Keiichi Sahara , Masaaki Imura , Tsutomu Imamura , Yasutaka Tanabe
- Applicant: NIPPON ELECTRIC GLASS CO., LTD.
- Applicant Address: JP Otsu
- Assignee: Nippon Electric Glass Co., Ltd.
- Current Assignee: Nippon Electric Glass Co., Ltd.
- Current Assignee Address: JP Shiga
- Agency: Cesari & McKenna, LLP
- Priority: JP 18205415 2018.10.31
- International Application: PCT/JP2019/041699 2019.10.24
- International Announcement: WO2020/090615A 2020.05.07
- Date entered country: 2021-04-26
- Main IPC: G02B5/28
- IPC: G02B5/28 ; G02B5/20

Abstract:
Provided are: a band-pass filter for which filter characteristics can be improved; and a manufacturing method therefor. A band-pass filter 11, which allows light of a specific wavelength region to pass, includes: a substrate 12 which has light transmitting properties; a first dielectric multilayer film 13 that is provided on a first main surface S1 of the substrate 12; and a second dielectric multilayer film 14 that is provided on a second main surface S2 which is opposite the first main surface S1. The first dielectric multilayer film 13 contains a hydrogenated silicon layer. The second dielectric multilayer film 14 contains a hydrogenated silicon layer.
Public/Granted literature
- US20220003908A1 BAND-PASS FILTER AND MANUFACTURING METHOD THEREFOR Public/Granted day:2022-01-06
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