Invention Grant
- Patent Title: Amplification control method and circuit, sensitive amplifier and semiconductor memory
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Application No.: US17838596Application Date: 2022-06-13
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Publication No.: US12033689B2Publication Date: 2024-07-09
- Inventor: Daoxun Wu , Weibing Shang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2111658991.9 2021.12.31
- Main IPC: G11C11/4091
- IPC: G11C11/4091

Abstract:
An amplification control method and circuit, a sensitive amplifier and a semiconductor memory are provided. The method includes that: a preset instruction is received, and an isolation power value and a control instruction signal are determined according to the preset instruction; an isolation control signal is generated according to the isolation power value and the control instruction signal; and an amplification circuit receives the isolation control signal and a target signal to be processed according to the preset instruction, and processes the signal to be processed and completes the preset instruction.
Public/Granted literature
- US20230230631A1 AMPLIFICATION CONTROL METHOD AND CIRCUIT, SENSITIVE AMPLIFIER AND SEMICONDUCTOR MEMORY Public/Granted day:2023-07-20
Information query
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