Invention Grant
- Patent Title: Capacitor structure and manufacturing method thereof
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Application No.: US17601702Application Date: 2021-06-21
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Publication No.: US12033799B2Publication Date: 2024-07-09
- Inventor: Xingsong Su , Weiping Bai , Mengkang Yu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2110150428.4 2021.02.03
- International Application: PCT/CN2021/101299 2021.06.21
- International Announcement: WO2022/166075A 2022.08.11
- Date entered country: 2021-10-05
- Main IPC: H01G4/10
- IPC: H01G4/10 ; H01G4/33

Abstract:
A manufacturing method for capacitor structure includes: forming a dielectric layer on a first electrode, wherein the dielectric layer includes metal oxide layers doped with preset oxides, and part of the preset oxide and a metal oxide share oxygen atoms; and forming a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer and the second electrode constitute a capacitor structure.
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