Invention Grant
- Patent Title: Co-deposition of cesium telluride photocathode and X-ray fluorescence controller co-deposition of cesium telluride photocathode
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Application No.: US17071501Application Date: 2020-10-15
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Publication No.: US12033846B2Publication Date: 2024-07-09
- Inventor: Mengjia Gaowei , John Smedley , John Walsh , Jiajie Cen , John Jay Sinsheimer
- Applicant: United States Department of Energy
- Applicant Address: US DC Washington
- Assignee: U.S. Department of Energy
- Current Assignee: U.S. Department of Energy
- Current Assignee Address: US DC Washington
- Agent Timothy L. Harney; Daniel Park; Brian J. Lally
- Main IPC: H01J9/12
- IPC: H01J9/12 ; C01B19/00 ; C23C14/06 ; C23C14/24 ; C23C14/52
Abstract:
One or more embodiments relates to a system and method for growing ultrasmooth and high quantum efficiency photocathodes. The method includes exposing a substrate of Si wafer to an alkali source; controlling co-evaporating growth and co-deposition forming a growth including Te; and monitoring a stoichiometry of the growth, forming the photocathodes.
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