Invention Grant
- Patent Title: Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US17748841Application Date: 2022-05-19
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Publication No.: US12033852B2Publication Date: 2024-07-09
- Inventor: Takayuki Waseda , Takashi Nakagawa , Kimihiko Nakatani , Motomu Degai , Yoshitomo Hashimoto
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 19140991 2019.07.31
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/02 ; C23C16/34 ; C23C16/458

Abstract:
There is method of processing a substrate comprising: (a) providing the substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and (c) forming a film on a surface of the first base by supplying a film-forming gas to the substrate in a state where the surface of the second base is modified.
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