Invention Grant
- Patent Title: Semiconductor structure and formation method thereof
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Application No.: US17511844Application Date: 2021-10-27
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Publication No.: US12033920B2Publication Date: 2024-07-09
- Inventor: Pingheng Wu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2010299821.5 2020.04.16
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L25/065
Abstract:
The present application relates to the field of semiconductor technologies, and discloses a semiconductor structure and a formation method thereof. The method includes: providing a semiconductor substrate, the semiconductor substrate including a TSV; forming a dielectric layer on a surface of the semiconductor substrate, the dielectric layer being provided with an embedded metal landing pad; and etching the dielectric layer to form a communication hole for communicating the TSV with the metal landing pad.
Information query
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