Invention Grant
- Patent Title: Semiconductor device with self-aligned waveguide and method therefor
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Application No.: US17374039Application Date: 2021-07-13
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Publication No.: US12033950B2Publication Date: 2024-07-09
- Inventor: Michael B. Vincent , Scott M. Hayes , Antonius Hendrikus Jozef Kamphuis
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Robert J. Amedeo
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/48 ; H01L23/498 ; H01Q1/22
Abstract:
A method of forming a self-aligned waveguide is provided. The method includes forming a first alignment feature on a packaged semiconductor device and a second alignment feature on a waveguide structure. A solder material is applied to the first alignment feature or the second alignment feature. The waveguide structure is placed onto the packaged semiconductor device such that the second alignment feature overlaps the first alignment feature. The solder material is reflowed to cause the waveguide structure to align with the packaged semiconductor device.
Public/Granted literature
- US20230017646A1 SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVEGUIDE AND METHOD THEREFOR Public/Granted day:2023-01-19
Information query
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