Invention Grant
- Patent Title: Dummy pattern structure for reducing dishing
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Application No.: US17546003Application Date: 2021-12-08
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Publication No.: US12033959B2Publication Date: 2024-07-09
- Inventor: Jen-Yuan Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/00 ; H01L25/065

Abstract:
A device includes a substrate, at least one first dielectric layer on the substrate and including a first dielectric constant, at least one second dielectric layer on the at least one first dielectric layer and including a second dielectric constant greater than the first dielectric constant, and a dummy pattern including a first conductive pattern having a first pattern density in the at least one first dielectric layer and a second conductive pattern in the at least one second dielectric layer and comprising a second pattern density. The first pattern density is equal to or greater than the second pattern density.
Public/Granted literature
- US20220352092A1 DUMMY PATTERN STRUCTURE FOR REDUCING DISHING Public/Granted day:2022-11-03
Information query
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