Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US18312325Application Date: 2023-05-04
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Publication No.: US12033965B2Publication Date: 2024-07-09
- Inventor: Wen-Hao Cheng , Yen-Yu Chen , Chih-Wei Lin , Yi-Ming Dai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L21/768 ; H01L23/31 ; H01L23/522
Abstract:
A method is provided. The method includes forming an interconnect structure electrically connected to a semiconductor device; forming a tantalum-based barrier layer over the interconnect structure; oxidizing the tantalum-based barrier layer to form a tantalum oxide over the tantalum-based barrier layer; and forming a metal layer over the tantalum oxide.
Public/Granted literature
- US20230275048A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2023-08-31
Information query
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