Invention Grant
- Patent Title: Fully interconnected heterogeneous multi-layer reconstructed silicon device
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Application No.: US17457350Application Date: 2021-12-02
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Publication No.: US12033982B2Publication Date: 2024-07-09
- Inventor: Jun Zhai
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Aikin & Gallant, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065
Abstract:
Reconstructed 3DIC structures and methods of manufacture are described. In an embodiment, one or more dies in each package level of a 3DIC are both functional chips and/or stitching devices for two or more dies in an adjacent package level. Thus, each die can function as a communication bridge between two other dies/chiplets in addition to performing a separate chip core function.
Public/Granted literature
- US20220157782A1 Fully Interconnected Heterogeneous Multi-layer Reconstructed Silicon Device Public/Granted day:2022-05-19
Information query
IPC分类:
