Invention Grant
- Patent Title: Active matrix substrate
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Application No.: US18119624Application Date: 2023-03-09
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Publication No.: US12034010B2Publication Date: 2024-07-09
- Inventor: Masahiko Suzuki , Tetsuo Kikuchi , Hideki Kitagawa , Setsuji Nishimiya , Kengo Hara , Hitoshi Takahata , Tohru Daitoh
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: Keating & Bennett, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/00

Abstract:
An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.
Public/Granted literature
- US20230215876A1 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2023-07-06
Information query
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