Invention Grant
- Patent Title: Light receiving element, solid-state imaging device, and electronic device
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Application No.: US17998520Application Date: 2021-04-06
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Publication No.: US12034019B2Publication Date: 2024-07-09
- Inventor: Shinichiro Kurihara
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP 20090535 2020.05.25
- International Application: PCT/JP2021/014626 2021.04.06
- International Announcement: WO2021/241010A 2021.12.02
- Date entered country: 2022-11-11
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Provided is a light-receiving element having a structure in which a floating diffusion region is surrounded by transfer gate electrodes in a single photoelectric conversion region constituting a pixel, the structure making it possible to improve optical symmetry and to extract light efficiently. The light-receiving element comprises: a photoelectric conversion region constituting a pixel; a floating diffusion region of a first electrical conductivity type provided on one main surface side of the photoelectric conversion region; and a plurality of transfer gate electrodes which are provided on the one main surface side of the photoelectric conversion region and are spaced apart from each other with a gate insulating film therebetween, the plurality of transfer gate electrodes being provided symmetrically about the floating diffusion region in a planar pattern.
Public/Granted literature
- US20230246042A1 LIGHT RECEIVING ELEMENT, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2023-08-03
Information query
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