Invention Grant
- Patent Title: Trench gate trench field plate vertical MOSFET
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Application No.: US17516017Application Date: 2021-11-01
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Publication No.: US12034074B2Publication Date: 2024-07-09
- Inventor: Marie Denison , Sameer Pendharkar , Guru Mathur
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- The original application number of the division: US14044915 2013.10.03
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/225 ; H01L21/283 ; H01L21/324 ; H01L21/8234 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/51 ; H01L29/66
Abstract:
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
Information query
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