Invention Grant
- Patent Title: Semiconductor device integrating backside power grid and related integrated circuit and fabrication method
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Application No.: US17406884Application Date: 2021-08-19
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Publication No.: US12034076B2Publication Date: 2024-07-09
- Inventor: Chih-Liang Chen , Lei-Chun Chou , Jack Liu , Kam-Tou Sio , Hui-Ting Yang , Wei-Cheng Lin , Chun-Hung Liou , Jiann-Tyng Tzeng , Chew-Yuen Young
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US15993149 2018.05.30
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L21/8234 ; H01L23/48 ; H01L23/528 ; H01L23/535 ; H01L27/088 ; H01L29/417 ; H01L29/66
Abstract:
A semiconductor device includes a substrate, a dielectric region, a first fin structure, a second fin structure, a plurality of conductive regions, a first conductive rail and a conductive structure. The dielectric region is situated on the substrate. The first fin structure protrudes from the substrate and the dielectric region. The second fin structure protrudes from the substrate and the dielectric region, and extends parallel to the first fin structure. The conductive regions are situated on the dielectric region. The first conductive rail is situated within the dielectric region, and electrically connected to a first conductive region of the plurality of conductive regions. Opposite sides of the first conductive rail face the first fin structure and the second fin structure, respectively. The conductive structure penetrates through the substrate and formed under the first conductive rail, and is electrically connected to the first conductive rail.
Public/Granted literature
Information query
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